2SK1104 |
Part Number | 2SK1104 |
Manufacturer | Panasonic Semiconductor |
Description | Silicon Junction FETs (Small Signal) 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 s Features q Low ON-resistance q Low-noise characteristics unit: mm 4.0±0.2 3.0±0.2 0... |
Features |
q Low ON-resistance q Low-noise characteristics
unit: mm
4.0±0.2
3.0±0.2 0.7±0.1
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings −65 20 10 300 150 −55 to +150 Unit V mA mA mW °C °C
1.27 1.27 1 2 3
2.0±0.2
marking
+0.2 0.45 –0.1 2.54±0.15 1: Source 2: Gate 3: Drain EIAJ: SC-72 New S Type Package s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to... |
Document |
2SK1104 Data Sheet
PDF 31.26KB |
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