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2SK1083 |
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| Part Number | 2SK1083 |
| Manufacturer | Fuji Electric |
| Description | 2SK1083-MR F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 60V 0,22Ω 8A 20W > Outline Drawing > Ap... |
| Features |
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
N-channel MOS-FET
60V
0,22Ω
8A
20W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS I I I V P T T
D D(puls) DR GS D ch stg
> Equivalent ... |
| Document |
 2SK1083 Data Sheet
PDF 186.11KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK108 |
Toshiba |
Silicon P-Channel FET |
|
| 2 | 2SK1081 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK1081-01 |
Fuji |
N-Channel Silicon Power MOSFET |
|
| 4 | 2SK1082 |
Fuji Electric |
N-Channel Silicon Power MOS-FET |
|
| 5 | 2SK1082 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK1082-01 |
Fuji Electric |
N-Channel Silicon Power MOS-FET |
|
Desde 2024. D4U Semiconductor.
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