2SJ620 |
Part Number | 2SJ620 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Title | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) |
Features |
rmal Characteristics
Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.0 Unit °C/W 1
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = -50 V, Tch = 25°C (initial), L = 3.56 mH, RG = 25 W, IAR = -18 A Note 3: Repetitive ratin... |
Document |
2SJ620 Data Sheet
PDF 225.54KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SJ621 |
NEC |
MOS FIELD EFFECT TRANSISTOR | |
2 | 2SJ624 |
NEC |
MOS FIELD EFFECT TRANSISTOR | |
3 | 2SJ625 |
NEC |
MOS FIELD EFFECT TRANSISTOR | |
4 | 2SJ626 |
NEC |
MOS FIELD EFFECT TRANSISTOR | |
5 | 2SJ628 |
Sanyo Semicon |
P-Channel Silicon MOSFET | |
6 | 2SJ629 |
Sanyo Semicon Device |
P-Channel MOSFET |