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2SJ586 |
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| Part Number | 2SJ586 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A (Z) 2nd.Edition. June 1999 Features • Low on-resistance R DS = 4.1 Ω typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 Ω typ. (VGS = -2.5 ... |
| Features |
• Low on-resistance R DS = 4.1 Ω typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA) • 2.5 V gate drive device. • Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings -20 ±10 -100 -400 -100 300 150 –55 to +150 Unit V V mA mA mA mW °... |
| Document |
 2SJ586 Data Sheet
PDF 41.39KB |
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