2SJ584LS |
Part Number | 2SJ584LS |
Manufacturer | Sanyo Semicon Device |
Description | Ordering number:ENN6410 P-Channel Silicon MOSFET 2SJ584LS Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. ... |
Features |
· Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SJ584LS] 10.0 3.5 7.2 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI-LS Conditions 0.6 Ratings –250 ±3... |
Document |
2SJ584LS Data Sheet
PDF 42.93KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SJ580 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
2 | 2SJ583LS |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
3 | 2SJ585LS |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
4 | 2SJ586 |
Hitachi Semiconductor |
Silicon P Channel MOS FET High Speed Switching | |
5 | 2SJ587 |
Hitachi Semiconductor |
Silicon P Channel MOS FET High Speed Switching | |
6 | 2SJ588 |
Hitachi Semiconductor |
Silicon P Channel MOS FET High Speed Switching |