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2SJ583LS |
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| Part Number | 2SJ583LS |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:ENN6409 P-Channel Silicon MOSFET 2SJ583LS Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. ... |
| Features |
· Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SJ583LS] 10.0 3.5 7.2 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI-LS Conditions 0.6 Ratings –250 ±3... |
| Document |
 2SJ583LS Data Sheet
PDF 42.46KB |
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