Busque con el número de pieza junto con el fabricante o la descripción
2SJ539 |
Click to view a larger image
| Part Number | 2SJ539 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.16 Ω typ. • Low drive current • 4 V gete drive devices • H... |
| Features |
• Low on-resistance R DS(on) = 0.16 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ539 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –10 –40 –10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –10 8.5 40 150 –55 to +... |
| Document |
 2SJ539 Data Sheet
PDF 54.47KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ530 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 2 | 2SJ530L |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 3 | 2SJ530S |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 4 | 2SJ531 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 5 | 2SJ532 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 6 | 2SJ533 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|