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2SJ535 |
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| Part Number | 2SJ535 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ535 Silicon P Channel MOS FET High Speed Power Switching ADE-208-627B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. •... |
| Features |
• Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO –220FM D G S 1 2 1. Gate 2. Drain 3. Source 3 2SJ535 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –30 –120 –30 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –30 77 35 150 –55 to +150 E... |
| Document |
 2SJ535 Data Sheet
PDF 54.87KB |
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