2SJ533 |
Part Number | 2SJ533 |
Manufacturer | Hitachi Semiconductor |
Description | 2SJ533 Silicon P Channel MOS FET High Speed Power Switching ADE-208-649B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. •... |
Features |
• Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO –220CFM D G 1 2 S 3 1. Gate 2. Drain 3. Source 2SJ533 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –30 –120 –30 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –30 77 35 150 –55 to +150 ... |
Document |
2SJ533 Data Sheet
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