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2SJ484 |
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| Part Number | 2SJ484 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS = –10V, ID = –1A) • Low drive current • High speed ... |
| Features |
• Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices. Outline UPAK 2 3 1 4 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ484 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –30 ±20 –2 –4 –2 1 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 1... |
| Document |
 2SJ484 Data Sheet
PDF 43.60KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ48 |
Hitachi Semiconductor |
P-Channel MOSFET |
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| 2 | 2SJ483 |
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| 3 | 2SJ485 |
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| 4 | 2SJ486 |
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| 5 | 2SJ486 |
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Desde 2024. D4U Semiconductor.
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