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2SJ411 |
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| Part Number | 2SJ411 |
| Manufacturer | NEC |
| Description | DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ411 P-CHANNEL SIGNAL MOS FET FOR SWITCHING The 2SJ411 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by t... |
| Features |
• Radial taping supported • Can be directly driven by 5-V IC • Low ON resistance RDS(on) = 0.24 Ω MAX. @VGS = –4 V, ID = –2.5 A RDS(on) = 0.11 Ω MAX. @VGS = –10 V, ID = –2.5 A 0.6 ±0.1 0.6 ±0.1 0.6 ±0.1 1.71.7 0.55 ±0.1 G D S EQUIVALENT CIRCUIT Drain (D) Gate (G) Internal Diode 4.0 MAX. 1.5 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 µs Duty cycle ≤ 1 % TA = 25 ˚C TC = 25 ˚C VGS = 0 VDS = 0 Gate Source (S) Protection Diode PIN CONNECTIONS G: Gate D: ... |
| Document |
 2SJ411 Data Sheet
PDF 70.52KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | 2SJ410 |
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P-Channel MOSFET |
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| 2 | 2SJ412 |
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| 3 | 2SJ413 |
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| 4 | 2SJ416 |
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| 5 | 2SJ417 |
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| 6 | 2SJ418 |
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Desde 2024. D4U Semiconductor.
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