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2SJ410 |
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| Part Number | 2SJ410 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ410 Silicon P-Channel MOS FET ADE-208-539 1st. Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown S... |
| Features |
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter and motor driver Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ410 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –200 ±20 –6 –24 –6 30... |
| Document |
 2SJ410 Data Sheet
PDF 29.95KB |
Similar Datasheet
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| 1 | 2SJ411 |
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