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2SJ248 |
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| Part Number | 2SJ248 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ248 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V sourc... |
| Features |
• • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ248 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –100 ±20 –8 ... |
| Document |
 2SJ248 Data Sheet
PDF 33.58KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ240 |
Toshiba |
Field Effect Transistor |
|
| 2 | 2SJ243 |
NEC |
P-Channel MOSFET |
|
| 3 | 2SJ244 |
Hitachi Semiconductor |
P-Channel MOSFET |
|
| 4 | 2SJ244 |
Renesas |
P-Channel MOSFET |
|
| 5 | 2SJ245 |
Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET |
|
| 6 | 2SJ246 |
Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET |
|
Desde 2024. D4U Semiconductor.
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