2SJ193 |
Part Number | 2SJ193 |
Manufacturer | Sanyo Semicon Device |
Description | Ordering number:EN3766 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ193 Ultrahigh-Speed Switching Applications Package Dimensions unit:... |
Features |
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ193 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SJ193] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (250mm2× 0.8mm) Elect... |
Document |
2SJ193 Data Sheet
PDF 122.12KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SJ190 |
Sanyo Semicon Device |
P-Channel MOSFET | |
2 | 2SJ191 |
Sanyo Semicon Device |
P-Channel MOSFET | |
3 | 2SJ192 |
Sanyo Semicon Device |
P-Channel MOSFET | |
4 | 2SJ194 |
Sanyo Semicon Device |
P-Channel MOSFET | |
5 | 2SJ195 |
Sanyo Semicon Device |
P-Channel MOSFET | |
6 | 2SJ196 |
NEC |
P-Channel MOSFET |