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2SD662 |
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| Part Number | 2SD662 |
| Manufacturer | Panasonic Semiconductor |
| Description | Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 R0.9 ... |
| Features |
q q q
1.5 R0.9 R0.9
0.85
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD662 2SD662B 2SD662 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO
(Ta=25˚C)
Ratings 250 400 200 400 5 100 70 600 150 –55 ~ +150 Unit 3 0.55±0.1 1.25±0.05 0.45±0.05 2 1 V 2.5 2.5 emitter voltage 2SD662B Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC –71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector t... |
| Document |
 2SD662 Data Sheet
PDF 39.42KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD661 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD661 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SD661A |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SD661A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD662 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD662B |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
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