D1003UK |
Download Datasheet |
Part Number | D1003UK |
Manufacturer | Seme LAB |
Description | TetraFET D1003UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B 1 2 4 3 M G C D E F HK PIN 1 PIN 3 SOURCE SOURCE DM PIN 2 PIN 4 IJ DRAIN GATE DIM mm A 24.76 B 18.42 C ... |
Features |
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 117W BVDSS Drain – Source Breakdown Voltage 70V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 15A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dim... |
Document |
D1003UK Data Sheet
PDF 57.79KB |