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AM82223-010 |
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| Part Number | AM82223-010 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The AM82223-010 is a common base, silicon NPN bipolar transistor designed for high gain and efficiency in the 2.2 − 2.3 GHz frequency range. Suitable for hi-rel aerospace telemetry applications, the A... |
| Features |
Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PIN CONNECTION
PDISS IC VCC TJ TSTG
Power Dissipation* Device Current*
(TC ≤ 75˚C)
28 1.2 26 200 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 4.4 °C/W
*Applies only to rated RF amplifier operation NOTE: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot Junction Temperature at rated RF operating conditions.
August 31, 1994
1/3
AM82223-010
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Min. Va... |
| Document |
 AM82223-010 Data Sheet
PDF 59.69KB |
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