BAT62-08S |
Part Number | BAT62-08S |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | BAT62... Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies BAT62 BAT62-02L BAT62-02W BAT62-03W 3 D 2 BAT62-07W BAT62-07L4 4 3 BAT62-08S BAT62-09S 4 D 1 6 5 4 6 5... |
Features |
08S, -09S, TS ≤ 105 °C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BAT62 BAT62-02L, -07L4, -03W BAT62-02W BAT62-07W BAT62-08S BAT62-09S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Reverse current
VR = 40 V IR VF ∆ VF
Symbol VR IF Ptot
Value 40 20 100 100 100 100 100
Unit V mA mW
Tj Tstg Symbol
RthJS
150 -55 ... 150
°C
Value
≤ 650 ≤ 420 ≤ 410 ≤ 470 ≤ 450 ≤ tbd
Unit K/W
Symbol min. -
Values typ. 0.58 max. 10 1 20
Unit
µA V mV
Forward voltage
I F = 2 mA
Forward voltage matchi... |
Document |
BAT62-08S Data Sheet
PDF 519.15KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BAT62-02L |
Infineon Technologies AG |
Silicon Schottky Diode | |
2 | BAT62-02LS |
Infineon |
Silicon Schottky Diode | |
3 | BAT62-02V |
Infineon |
Silicon Schottky Diode | |
4 | BAT62-02W |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) | |
5 | BAT62-02W |
Infineon Technologies AG |
Silicon Schottky Diode | |
6 | BAT62-03W |
Siemens Semiconductor Group |
Silicon Schottky Diode |