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BAT62-02W |
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| Part Number | BAT62-02W |
| Manufacturer | Siemens Semiconductor Group |
| Description | BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies 2 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution Type BAT 62-02W ... |
| Features |
Hz
Case capacitance
f = 1 MHz
Differential resistance kΩ nH
VR = 0 , f = 10 kHz
Series inductance chip to ground
Semiconductor Group Semiconductor Group
22
Jul-02-1998 1998-11-01
BAT 62-02W
Forward current IF = f (TA*;TS) * Package mounted on epoxy
50
mA
IF TA
30
TS
20
10
0 0
20
40
60
80
100
120 °C
150
TA,TS
Permissible Pulse Load R thJS = f(t p)
Permissible Pulse Load
IFmax / IFDC = f(tp)
10 3 10 1
K/W
RthJS
IFmax / IFDC
10 2
-
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1 -7 10 10
-6
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10
-5
10
-4
10
-3
10
-2
s
10
0
1... |
| Document |
 BAT62-02W Data Sheet
PDF 26.35KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BAT62-02L |
Infineon Technologies AG |
Silicon Schottky Diode |
|
| 2 | BAT62-02LS |
Infineon |
Silicon Schottky Diode |
|
| 3 | BAT62-02V |
Infineon |
Silicon Schottky Diode |
|
| 4 | BAT62-02W |
Infineon Technologies AG |
Silicon Schottky Diode |
|
| 5 | BAT62-03W |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 6 | BAT62-03W |
Infineon Technologies AG |
Silicon Schottky Diode |
|
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