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BAT15-098 |
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| Part Number | BAT15-098 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Silicon Schottky Diode Preliminary Data DBS mixer application to 10 GHz Low noise figure q Low barrier type q q BAT 15-098 ESD: Electrostatic discharge sensitive device, observe handling precautions... |
| Features |
e capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA/50 mA Symbol min. V(BR) VF – – ∆VF CT RF – – – 0.23 0.32 – – 5.5 – – 20 0.35 – mV pF Ω 4 Values typ. – max. – V Unit Semiconductor Group 2 BAT 15-098 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 BAT 15-098 S11-Parameters Typical impedance characteristics (with external bias I and Z0 = Ω) f GHz 1 2 3 4 5 6 7 8 9 10 I = 0.02 mA MAG ANG 0.96 0.95 0.94 0.91 0.88 0.87 0.86 0.89 0.91 0.93 – 22.19... |
| Document |
 BAT15-098 Data Sheet
PDF 88.31KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BAT15-090D |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 2 | BAT15-090R |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 3 | BAT15-090S |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 4 | BAT15-093 |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 5 | BAT15-094 |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 6 | BAT15-099 |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
Desde 2024. D4U Semiconductor.
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