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HSC276 |
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| Part Number | HSC276 |
| Manufacturer | Hitachi Semiconductor |
| Description | HSC276 Silicon Schottky Barrier Diode for Mixer ADE-208-421A(Z) Rev 1 Dec. 1998 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design... |
| Features |
• High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP Outline Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 -55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability *1 Symbol VR IR IF C — Min 3 — 35 — 30 Typ... |
| Document |
 HSC276 Data Sheet
PDF 24.26KB |
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