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HUFA76413DK8T |
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| Part Number | HUFA76413DK8T |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstan... |
| Features |
• • • • 150°C Maximum Junction Temperature UIS Capability (Single Pulse and Repetitive Pulse) Ultra-Low On-Resistance rDS(ON) = 0.049Ω, VGS = 10V Ultra-Low On-Resistance rDS(ON) = 0.056Ω, VGS = 5V D1 (8) D1 (7) D2 (6) D2 (5) 1 SO-8 S1 (1) G1 (2) S2 (3) G2 (4) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 25oC, VGS = 5V) Continuous (TC = 125oC, VGS = 5V, Rθ JA = 228oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power d... |
| Document |
 HUFA76413DK8T Data Sheet
PDF 269.30KB |
Similar Datasheet
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| 1 | HUFA76413D3 |
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| 2 | HUFA76413D3S |
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| 3 | HUFA76413P3 |
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| 4 | HUFA76419D3 |
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| 5 | HUFA76419D3S |
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| 6 | HUFA76419P3 |
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Desde 2024. D4U Semiconductor.
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