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HYB3118165BSJ-60 |
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| Part Number | HYB3118165BSJ-60 |
| Manufacturer | Siemens Semiconductor Group |
| Title | 1M x 16-Bit Dynamic RAM 1k Refresh |
| Features |
T-50/-60 HYB 3118165BSJ/BST-50/-60 1M × 16 EDO-DRAM
The HYB 5(3)118165 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 1 048 576 words by 16-bits. The HYB 5(3)118165 utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provid... |
| Document |
 HYB3118165BSJ-60 Data Sheet
PDF 192.05KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HYB3118165BSJ-50 |
Siemens Semiconductor Group |
1M x 16-Bit Dynamic RAM 1k Refresh |
|
| 2 | HYB3118165BST-50 |
Siemens Semiconductor Group |
1M x 16-Bit Dynamic RAM 1k Refresh |
|
| 3 | HYB3118165BST-60 |
Siemens Semiconductor Group |
1M x 16-Bit Dynamic RAM 1k Refresh |
|
| 4 | HYB3118160BSJ-50 |
Siemens Semiconductor Group |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
|
| 5 | HYB3118160BSJ-50 |
Siemens Semiconductor Group |
1M x 16-Bit Dynamic RAM 1k Refresh |
|
| 6 | HYB3118160BSJ-60 |
Siemens Semiconductor Group |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
|
Desde 2024. D4U Semiconductor.
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