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HYB3117405BJ-50 |
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| Part Number | HYB3117405BJ-50 |
| Manufacturer | Siemens Semiconductor Group |
| Description | DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns)... |
| Features |
include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-performance logic device families.The HYB3116405BTL parts have a very low power „sleep mode“ supported by Self Refresh.
Ordering Information Type
HYB 3117405BJ-50 HYB 3117405BJ-60 HYB 3117405BJ-70 HYB 3117405BT-50 HYB 3117405BT-60 HYB 3117405BT-70 HYB 3116405BJ-50 HYB 3116405BJ-60 HYB 3116405BJ-70 HYB 3116405BT-50 HYB 3116405BT-60 HYB 3116405BT-70 HYB 3116405BTL-50 HYB 3116405BTL-60 HYB 3116405BTL-70 Q67100-Q1143 Q67100-Q1144 Q67100-Q1186 on request on request on request Q67100-Q1135 Q67100-Q1136 Q67100-Q1184 Q67100-Q... |
| Document |
 HYB3117405BJ-50 Data Sheet
PDF 285.45KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HYB3117405BJ-60 |
Siemens Semiconductor Group |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
|
| 2 | HYB3117405BJ-70 |
Siemens Semiconductor Group |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
|
| 3 | HYB3117405BT-50 |
Siemens Semiconductor Group |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
|
| 4 | HYB3117405BT-60 |
Siemens Semiconductor Group |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
|
| 5 | HYB3117405BT-70 |
Siemens Semiconductor Group |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
|
| 6 | HYB3117400BJ-50 |
Siemens Semiconductor Group |
3.3V 4M x 4-Bit Dynamic RAM |
|
Desde 2024. D4U Semiconductor.
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