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AM1214-325 |
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| Part Number | AM1214-325 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty... |
| Features |
tter 4. Base
=
25 ° C)
Value Unit
Parameter
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 100°C)
1250 25 45 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.10 °C/W
*Applies only to rated RF amplifier operation
September 1992
1/4
AM1214-325
ELECTRICAL SPECIFICATIONS (Tcase STATIC
Symbol Test Conditions Valu e Min. Typ. Max. Unit
= 25 °C)
BVCBO BVEBO BVCES ICES hFE DYNAMIC
Symbol
IC = 50mA IE = 15mA IC = 50mA VCE = 50V VCE = 5V
IE = 0m... |
| Document |
 AM1214-325 Data Sheet
PDF 64.97KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AM1214-300 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 2 | AM1214-300 |
ASI |
NPN SILICON RF POWER TRANSISTOR |
|
| 3 | AM1214-100 |
STMicroelectronics |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
|
| 4 | AM1214-175 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 5 | AM1214-200 |
STMicroelectronics |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
|
| 6 | AM1214-250 |
ST Microelectronics |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS |
|
Desde 2024. D4U Semiconductor.
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