Busque con el número de pieza junto con el fabricante o la descripción
SCT027H65G3AG |
Click to view a larger image
| Part Number | SCT027H65G3AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature ... |
| Features |
Order code SCT027H65G3AG
VDS 650 V
RDS(on) typ. 29 mΩ
ID 60 A
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The de... |
| Document |
 SCT027H65G3AG Data Sheet
PDF 369.76KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SCT027W65G3-4AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|
| 2 | SCT020H120G3AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|
| 3 | SCT020HU120G3AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|
| 4 | SCT020W120G3-4AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|
| 5 | SCT025H120G3AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|
| 6 | SCT025W120G3-4AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|
Desde 2024. D4U Semiconductor.
|