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SCT040HU120G3AG |
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| Part Number | SCT040HU120G3AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature... |
| Features |
TAB
Order code
VDS
RDS(on) typ.
ID
7
SCT040HU120G3AG
1200 V
40 mΩ
40 A
Gate (1) Driver source (2)
1 HU3PAK
Drain (TAB)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • DC/DC converter for EV/HEV • Main inverter (electric traction) • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative... |
| Document |
 SCT040HU120G3AG Data Sheet
PDF 619.21KB |
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Desde 2024. D4U Semiconductor.
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