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SCT060W75G3AG |
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| Part Number | SCT060W75G3AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature... |
| Features |
Order code SCT060W75G3AG
VDS 750 V
RDS(on) typ. 60 mΩ
ID 30 A
HiP247
3 2
1
D(2, TAB)
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) G(1) S(3) Applications • DC/DC converter for EV/HEV • Main inverter (electric traction) • On board charger (OBC) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. ... |
| Document |
 SCT060W75G3AG Data Sheet
PDF 197.49KB |
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Desde 2024. D4U Semiconductor.
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