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FGY4L160T120SWD |
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| Part Number | FGY4L160T120SWD |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, FGY4L160T120SWD offers the optimum performance with low switching and conduction losses for high−e... |
| Features |
• Maximum Junction Temperature TJ = 175°C • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • Smooth and Optimized Switching • Low Switching Loss • RoHS Compliant Applications • Solar Inverter • UPS • Energy Storage System MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VCE 1200 V VGE ±20 ±30 Collector Current TC = 25°C (Note 1) TC = 100°C Power Dissipation TC = 25°C TC = 100°C Pulsed Collector Current TC = 25°C, tp = 10 ... |
| Document |
 FGY4L160T120SWD Data Sheet
PDF 233.73KB |
Similar Datasheet
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| 2 | FGY100T120RWD |
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| 3 | FGY100T120SWD |
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| 4 | FGY100T65SCDT |
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| 6 | FGY140T120SWD |
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Desde 2024. D4U Semiconductor.
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