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NVMFS6H818N |
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| Part Number | NVMFS6H818N |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 80 V, 3.7 mW, 123 A NVMFS6H818N V(BR)DSS 80 V RDS(ON) MAX 3.7 mW @ 10 V ID MAX 123 A D (5,6) Features • Small Footprint (5x6 mm) for Co... |
| Features |
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H818NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°... |
| Document |
 NVMFS6H818N Data Sheet
PDF 212.23KB |
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Desde 2024. D4U Semiconductor.
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