D2256UK |
Part Number | D2256UK |
Manufacturer | Seme LAB |
Description | TetraFET D2256UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D B E 8 7 6 F 5 O J K L 1 2 R 3 4 C A Q N M I P H G DBC4 Package PIN 1 Source (Common) PIN 5 Source (Common) ... |
Features |
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 70W BVDSS Drain – Source Breakdown Voltage * 40V BVGSS Gate – Source Breakdown Voltage * ±20V ID(sat) Drain Current * 8A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail... |
Document |
D2256UK Data Sheet
PDF 33.01KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | D2256 |
Hitachi |
Silicon NPN Triple Diffused | |
2 | D2250 |
Panasonic Semiconductor |
2SD2250 | |
3 | D2251 |
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2SD2251 | |
4 | D2253UK |
Seme LAB |
METAL GATE RF SILICON FET | |
5 | D2254UK |
Seme LAB |
METAL GATE RF SILICON FET | |
6 | D2255 |
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Power Transistors |