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D2002UK |
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| Part Number | D2002UK |
| Manufacturer | Seme LAB |
| Description | TetraFET D2002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C 2 1 A 3 F (2 pls) H J N (typ) B D (2 pls) MI PIN 1 PIN 3 SOURCE GATE E KG DP PIN 2 DRAIN DIM mm A 16.51 B 6.3... |
| Features |
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 29W BVDSS Drain – Source Breakdown Voltage 65V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 2A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimension... |
| Document |
 D2002UK Data Sheet
PDF 90.43KB |
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