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BUZ50B-220M |
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| Part Number | BUZ50B-220M |
| Manufacturer | Seme LAB |
| Description | BUZ50A–220M BUZ50B–220M MECHANICAL DATA Dimensions in mm 10.6 (0.42) 0.8 4.6 (0.18) (0.03) 3.70 Dia. Nom 16.5 (0.65) 1.5(0.53) 10.6 (0.42) 123 MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS F... |
| Features |
• HERMETIC TO220 ISOLATED METAL PACKAGE • CECC SCREENING OPTIONS • JAN LEVEL SCREENING OPTIONS 12.70 (0.50 min) 2.54 (0.1) BSC 1.0 (0.039) 2.70 (0.106) TO220M (TO-257AB)- Isolated Metal Package Pin 1 – Gate Pin 2 – Drain Pin 3 – Source APPLICATIONS: Hermetically sealed version for high reliability power linear and switching applications ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain – Source Voltage VGS Gate – Source Voltage ID Continious Drain Current IDM Maximum Pulsed Drain Current PD Total Power Dissipation at Tcase ≤ 25°C Tstg Storage Temperatu... |
| Document |
 BUZ50B-220M Data Sheet
PDF 15.27KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ50B |
Siemens Semiconductor Group |
Power Transistor |
|
| 2 | BUZ50A |
Siemens Semiconductor Group |
Power Transistor |
|
| 3 | BUZ50A |
ETC |
HIGH VOLTAGE POWER MOSFET |
|
| 4 | BUZ50A-220M |
Seme LAB |
MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS |
|
| 5 | BUZ50C |
Siemens Semiconductor Group |
Power Transistor |
|
| 6 | BUZ51 |
Siemens Semiconductor Group |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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