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3N187 |
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| Part Number | 3N187 |
| Manufacturer | Siliconix |
| Description | -..... 00 z C? depletion-type n-channel dual gate MOSFET H designed for • • • Performance Curves MCB See Section 4 • VHF Amplifiers • IF Amplifiers • Mixers *ABSOLUTE MAXIMUM RATINGS (25°C) Drain... |
| Features |
5T
- 'C
6
-
7
-
8
-
9
Gate One to Source IG1SS leakage Current
IG2SS
Gate Two to Source Leakage Current
IG1SS IG2SS
Gate One 10 Source Leakage Current
Gate Two to Source Leakage Current
BV
Gate One to Source
G1SS Breakdown Voltage
BV
Gate Two to Source
G2SS Breakdown Voltage
V
Gate One to Source
G1Sloff)Cutoff Voltage
V
Gate Two to Source
G2S(off) Cutoff Voltage
'OS
Zero Gate One Voltage Drain Current
±50 ,A
±50
VG1S = ±6 V, VG2S = VDS = 0 VG2S = ±6 V, VG1S = VOS '" 0
±6.5
t5 MA
"
±13
VG1S = ±6 V. VG2S = VOS '" 0 VG2S = ±6 V, VG1S = VOS" 0 IGl '" ±100tlA, VG2S = Vas'" ... |
| Document |
 3N187 Data Sheet
PDF 106.63KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3N180-E3 |
UTC |
1800V N-CHANNEL POWER MOSFET |
|
| 2 | 3N187 |
Vaishali Semiconductor |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
|
| 3 | 3N188 |
Intersil |
Dual P-Channel MOSFET |
|
| 4 | 3N189 |
Intersil |
Dual P-Channel MOSFET |
|
| 5 | 3N100E |
Motorola |
MTB3N100E |
|
| 6 | 3N1012 |
Infineon |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
|