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NCE75H21TB |
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| Part Number | NCE75H21TB |
| Manufacturer | VBsemi |
| Description | NCE75H21TB-VB NCE75H21TB-VB Datasheet N-Channel 80 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.0028 at VGS = 10 V 80 0.0030 at VGS = 7.5 V ID (A) 215 205 Qg (TYP.) ... |
| Features |
• TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Very low Qgd reduces power loss from passing through Vplateau • 100 % Rg and UIS tested APPLICATIONS • Power supply - Secondary synchronous rectification • DC/DC converter • Power tools • Motor drive switch • DC/AC inverter • Battery management ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Avalanche Current Single Avalanche Energy a Maximum Power Dissipation a Operating Junction a... |
| Document |
 NCE75H21TB Data Sheet
PDF 252.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NCE75H21T |
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| 2 | NCE75H21TB |
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| 3 | NCE75H21 |
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| 4 | NCE75H21B |
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| 5 | NCE75H21D |
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| 6 | NCE75H26T |
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| 7 | NCE75H11 |
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| 8 | NCE75H14 |
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| 9 | NCE75H35T |
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| 10 | NCE75H35TC |
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Desde 2024. D4U Semiconductor.
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