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13N10 |
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| Part Number | 13N10 |
| Manufacturer | VBsemi |
| Description | 13N10 N-Channel 100-V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.092 at VGS = 10 V ID (A) 18 TO-220AB D FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Te... |
| Features |
• TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters RoHS COMPLIANT GD S Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TA = 25 °Cd PD Operating Junction and Storage Temperatur... |
| Document |
 13N10 Data Sheet
PDF 634.91KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 13N10 |
Fairchild Semiconductor |
FQB13N10 |
|
| 2 | 13N120-E2 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 3 | 13N120K5 |
STMicroelectronics |
N-Channel MOSFET |
|
| 4 | 13N03LA |
Infineon Technologies |
IPD13N03LA |
|
| 5 | 13N06L |
Fairchild Semiconductor |
FQB13N06L |
|
| 6 | 13N40 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
Desde 2024. D4U Semiconductor.
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