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F3007S |
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| Part Number | F3007S |
| Manufacturer | VBsemi |
| Description | F3007S-VB F3007S-VB Datasheet N-Channel 80 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 80 V 6 mΩ 10 mΩ 120 A Single TO-263 F... |
| Features |
• ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see D G Top View S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID TC = 125 °C Pulsed Drain Current (t = 100 μs) IDM Avalanche Current Single Avalanche Energy a IAS L = 0.1 mH EAS Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C T... |
| Document |
 F3007S Data Sheet
PDF 420.03KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F3002 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
| 2 | F3003 |
CSF |
Tube |
|
| 3 | F3027 |
CSF |
Tube |
|
| 4 | F30D05 |
Mospec Semiconductor |
Power Rectifier |
|
| 5 | F30D10 |
Mospec Semiconductor |
Power Rectifier |
|
| 6 | F30D15 |
Mospec Semiconductor |
Power Rectifier |
|
| 7 | F30D20 |
Mospec Semiconductor |
Power Rectifier |
|
| 8 | F30D30 |
Mospec Semiconductor |
POWER RECTIFIERS |
|
| 9 | F30D40 |
Mospec Semiconductor |
POWER RECTIFIERS |
|
| 10 | F30D50 |
Mospec Semiconductor |
POWER RECTIFIERS |
|
Desde 2024. D4U Semiconductor.
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