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IS35MW04G168 |
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| Part Number | IS35MW04G168 |
| Manufacturer | ISSI |
| Description | The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented... |
| Features |
• Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number of Plane = 1 - Number of Block per Die (LUN) = 2048 • ONFI 1.0 compliant • Highest performance - Read Performance: - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance: - Program time: 300us (typ.), 700us (max.) - Block Erase time: 3.5ms (typ.), 10ms (max.) • Voltage and Temp. Ranges - Single 1.8... |
| Document |
 IS35MW04G168 Data Sheet
PDF 2.04MB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | IS35MW04G164 |
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4Gb(x8/x16) 1.8V NAND FLASH MEMORY |
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| 2 | IS35MW04G084 |
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| 3 | IS35MW04G088 |
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| 4 | IS35MW01G084 |
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| 5 | IS35MW01G164 |
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| 6 | IS35MW02G084 |
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Desde 2024. D4U Semiconductor.
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