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MDP10N027 |
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| Part Number | MDP10N027 |
| Manufacturer | MagnaChip |
| Description | Features The MDP10N027 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also ... |
| Features |
The MDP10N027 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality.
These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications.
VDS = 100V ID = 120A @VGS = 10V Very low on-resistance RDS(ON)
< 2.8 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested
D
G D S
TO-220
Absolute Maximum Ratings (TJ = 25 oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1) Pu... |
| Document |
 MDP10N027 Data Sheet
PDF 880.15KB |
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Desde 2024. D4U Semiconductor.
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