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FQD12N20L |
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| Part Number | FQD12N20L |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state r... |
| Features |
• 9.0 A, 200 V, RDS(on) = 280 mW (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 16 nC) • Low Crss (Typ. 17 pF) • 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Rating Unit VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain−Source Voltage Drain Current Drain Current − Continuous (TC = 25°C) − Continuous (TC = 100°C) − Pulsed (Note 1) Gate−Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 200 V 9.0 A 5.7 A 36 A ±20 V 2... |
| Document |
 FQD12N20L Data Sheet
PDF 289.61KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FQD12N20 |
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| 2 | FQD12N20L |
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| 3 | FQD12N20LTM_F085 |
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Desde 2024. D4U Semiconductor.
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