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EMB20N03VL |
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| Part Number | EMB20N03VL |
| Manufacturer | Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 20mΩ 30mΩ ID@TC=25°C 22A Single N‐Channel MOSFET UIS, Rg... |
| Features |
d by maximum junction temperature. 2Duty cycle 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper.
6 °C / W
50
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge1,2
Gate‐Source Charge1,2 Gate‐Drain Charge1,2 Turn‐On Delay Time1,2 Rise Time1,2 Turn‐Off D... |
| Document |
 EMB20N03VL Data Sheet
PDF 839.13KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMB20N03V |
Excelliance MOS |
N-Channel MOSFET |
|
| 2 | EMB20N03VAA |
Excelliance MOS |
MOSFET |
|
| 3 | EMB20N03VAT |
Excelliance MOS |
MOSFET |
|
| 4 | EMB20N03A |
Excelliance MOS |
MOSFET |
|
| 5 | EMB20N03G |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 6 | EMB20N03Q |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
Desde 2024. D4U Semiconductor.
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