Busque con el número de pieza junto con el fabricante o la descripción
3N180-E3 |
Click to view a larger image
| Part Number | 3N180-E3 |
| Manufacturer | UTC |
| Description | The UTC 3N180-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 10.3 ... |
| Features |
* RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N180L-TA3-T 3N180G-TA3-T 3N180L-TF1-T 3N180G-TF1-T 3N180L-TQ2-T 3N180G-TQ2-T 3N180L-TQ2-R 3N180G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2024 U... |
| Document |
 3N180-E3 Data Sheet
PDF 287.57KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3N187 |
Vaishali Semiconductor |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
|
| 2 | 3N187 |
Siliconix |
n-channel dual gate MOSFET |
|
| 3 | 3N188 |
Intersil |
Dual P-Channel MOSFET |
|
| 4 | 3N189 |
Intersil |
Dual P-Channel MOSFET |
|
| 5 | 3N100E |
Motorola |
MTB3N100E |
|
| 6 | 3N1012 |
Infineon |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
|