2N4400 |
Part Number | 2N4400 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4400 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES . Low Leakage Current : IcEV=100nA (Max -)' lBEV=-100nA(Max.) @ V CE=35V, VB... |
Features |
. Low Leakage Current
: IcEV=100nA (Max -)' lBEV=-100nA(Max.) @ V CE=35V, VBE=-0.4V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: VcE(sat)=0-4V(Max.) @ Ic=150mA, lB=15mA . Low Collector Output Capacitance
: C b=6.5pF(Max.) @ V CB=5V . Complementary to 2N4402
Unit in mm
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
% Collector-Base Voltage * Collector-Emitter Voltage •X- Emitter-Base Voltage * Collector Current Base Current * Collector Power Dissipation (Ta=25°C) Derate Linearly 25°C SYMBOL VCBO VCEO VEBO ic IB PC RATING 60 40 6 600 100 350 2.8 ... |
Document |
2N4400 Data Sheet
PDF 62.45KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N4400 |
Fairchild Semiconductor |
NPN General Purpose Amplifier | |
2 | 2N4400 |
TAITRON |
Small Signal General Purpose NPN Transistors | |
3 | 2N4400 |
NTE |
Silicon NPN Transistor | |
4 | 2N4400 |
SeCoS |
NPN Plastic Encapsulated Transistor | |
5 | 2N4400 |
MCC |
NPN General Purpose Amplifier | |
6 | 2N4400 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |
7 | 2N4400 |
Motorola |
GENERAL PURPOSE TRANSISTOR | |
8 | 2N4400 |
Central Semiconductor |
SILICON NPN TRANSISTORS | |
9 | 2N4401 |
NXP |
NPN switching transistor | |
10 | 2N4401 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |