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2N3904 |
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| Part Number | 2N3904 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3904 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. . FEATURES . Low Leakage Current : ICEV=50nA(Max.), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V... |
| Features |
. Low Leakage Current
: ICEV=50nA(Max.), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: V C E(sat)=0.3V(Max.) @ I c=50mA, lB=5mA . Low Collector Output Capacitance
: C b=4pF(Max.) @ V C B=5V . Complementary to 2N3906
Unit in mm
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
SYMBOL VCBO VCEO VEBO
RATING 60 40
6
TOSHIBA Weight : 0.21g UNIT
V V V
Collector Current
ic
200
mA
Base Current
IB
Collector Power Dissipation
(Ta=25°C) Derate L... |
| Document |
 2N3904 Data Sheet
PDF 71.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3902 |
INCHANGE |
NPN Transistor |
|
| 2 | 2N3902 |
Multicomp |
Bipolar Transistor |
|
| 3 | 2N3902 |
Microsemi |
NPN HIGH POWER SILICON TRANSISTOR |
|
| 4 | 2N3902 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | 2N3902 |
Motorola |
HIGH VOLTAGE NPN SILICON TRANSISTORS |
|
| 6 | 2N3902 |
MA-COM |
NPN High Power Silicon Transistors |
|
| 7 | 2N3903 |
ON Semiconductor |
NPN Transistor |
|
| 8 | 2N3903 |
Semtech Corporation |
NPN Silicon Transistor |
|
| 9 | 2N3903 |
Fairchild Semiconductor |
NPN Amplifier |
|
| 10 | 2N3903 |
Toshiba |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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