2N3903 |
Part Number | 2N3903 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3903 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES . Low Leakage Current : ICEV=50nA(Max.), I BEV =-50nA(Max. @ V C E=30V, VB E=-3... |
Features |
. Low Leakage Current
: ICEV=50nA(Max.), I BEV =-50nA(Max. @ V C E=30V, VB E=-3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: VcE(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance
: C ob=4pF(Max.) @ V C B=5V . Complementary to 2N3905 '
Unit in mm
1. EMITTER 2. BASE 3. COLLECTOR
flAXIMUn RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
40
Emitter-Base Voltage
VEBO
6
Collector Current
ic
200
Base Current
IB
50
Collector Power Dissipation
350
(Ta=25°C) Derate Linearly 25°C
PC... |
Document |
2N3903 Data Sheet
PDF 70.25KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N3902 |
INCHANGE |
NPN Transistor | |
2 | 2N3902 |
Multicomp |
Bipolar Transistor | |
3 | 2N3902 |
Microsemi |
NPN HIGH POWER SILICON TRANSISTOR | |
4 | 2N3902 |
Seme LAB |
Bipolar NPN Device | |
5 | 2N3902 |
Motorola |
HIGH VOLTAGE NPN SILICON TRANSISTORS | |
6 | 2N3902 |
MA-COM |
NPN High Power Silicon Transistors | |
7 | 2N3903 |
ON Semiconductor |
NPN Transistor | |
8 | 2N3903 |
Semtech Corporation |
NPN Silicon Transistor | |
9 | 2N3903 |
Fairchild Semiconductor |
NPN Amplifier | |
10 | 2N3903 |
Motorola |
NPN Transistor |