2SJ111 |
Part Number | 2SJ111 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | SILICON f CHANNEL JUNCTION TYPE 2SJ111 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS. FEATURES . Recommended for First Stages of EQ Amplifier and MC Head Amplifiers. . High lY fs l : |Yf s ]=40mS(Typ.)... |
Features |
. Recommended for First Stages of EQ Amplifier and
MC Head Amplifiers. . High lY fs l
: |Yf s ]=40mS(Typ.) (VDS =-10V, VGS =0, I D SS=-5mA) . Low Noise : NF=1. OdB(Typ.
(VDS =-10V, I D=-5mA, f=lkHz, Rg =100Q) . High Input Impedance : lGSS=lnA(Max. ) (Vdg=-25V) . Complementary to 2SK369
Unit in mm 51 MAX .
1.27
1.27
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL RATING UNIT
Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range
VGDS IG PD
r stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Gate-Source Cut-off Current
IGSS... |
Document |
2SJ111 Data Sheet
PDF 108.50KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SJ112 |
ETC |
MOSFET | |
2 | 2SJ113 |
Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET | |
3 | 2SJ114 |
Hitachi Semiconductor |
HIGH FREQUENCY POWER AMPLIFIER | |
4 | 2SJ115 |
ETC |
SILICON P-CHANNEL MOS FET | |
5 | 2SJ115 |
Toshiba |
SILICON P-CHANNEL MOS FET | |
6 | 2SJ116 |
Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET |