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2SA1090 |
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| Part Number | 2SA1090 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : 2SA1090 I2 ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES • High Breakdown Voltage : VCEC... |
| Features |
• High Breakdown Voltage : VCECP-50V (Kin.), Veb'0=-8V (Min.) • High Gain and Excellent hps Linearity : hFE=70 ~ 400 at Vce=-1V, I c=-10mA • Complementary to 2SC2550. Unit in mm 05.8UkX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO vEBO IB PC L stg RATING -60 -50 UNIT -200 mA -50 mA 300 mW 175 -65^175 1. EMITTER Z. BASE 3. COLLECTOR (CASE) TOSHIBA TO 18 TC — 7 , TB — 8C 2 - 5A 1 B ELECTRIC... |
| Document |
 2SA1090 Data Sheet
PDF 132.23KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1091 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 2 | 2SA1091 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
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| 3 | 2SA1091 |
LZG |
SILICON PNP TRANSISTOR |
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| 4 | 2SA1093 |
Toshiba |
Silicon PNP Transistor |
|
| 5 | 2SA1093 |
SavantIC |
SILICON POWER TRANSISTOR |
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| 6 | 2SA1093 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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