AOT10B65MQ2 |
Part Number | AOT10B65MQ2 |
Manufacturer | Alpha & Omega Semiconductors |
Description | • Latest AlphaIGBT (αIGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(sat) enables high efficiencies ... |
Features |
by TJmax
ICM
30
A
Turn-Off SOA, VCE≤650V, Limited by TJmax
ILM
30
A
Continuous Diode Forward Current
TC=25°C TC=100°C
IF
20
A
10
Diode Pulsed Current, Limited by TJmax
IFM
30
A
Short Circuit Withstanding Time (1) VGE=15V, VCC≤400V, TJ≤175°C
tSC
5
ms
Power Dissipation
TC=25°C TC=100°C
PD
150
W
75
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
°C
Maximum Lead Temperature for Soldering Purpose, 1/8" from case for 5 seconds
TL
300
°C
Thermal Characteristics
Parameter
Symbol
AOT10B65MQ2
Units
Maximum Junction-to-Ambient
RqJA
65
Maximum IGBT J... |
Document |
AOT10B65MQ2 Data Sheet
PDF 592.34KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AOT10B65M1 |
Alpha & Omega Semiconductors |
10A Alpha IGBT | |
2 | AOT10B60D |
Alpha & Omega Semiconductors |
10A IGBT | |
3 | AOT101 |
ETC |
AOT101 | |
4 | AOT10N60 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET | |
5 | AOT10N60 |
INCHANGE |
N-Channel MOSFET | |
6 | AOT10N65 |
INCHANGE |
N-Channel MOSFET |