Busque con el número de pieza junto con el fabricante o la descripción
MT3S20P |
Click to view a larger image
| Part Number | MT3S20P |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEATURES • Low Noise Figure: NF=1.45dB (typ.) (@f=1GHz) • High Gain: |S21e|2=... |
| Features |
• Low Noise Figure: NF=1.45dB (typ.) (@f=1GHz) • High Gain: |S21e|2=11dB (typ.) (@f=1GHz) Marking MT3S20P Unit: mm MU Absolute Maximum Ratings (Ta = 25°C) PW-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (Typ.) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range VCBO 20 V VCEO 12 V VEBO 1.5 V IC 80 mA IB 10 mA PC 400 mW PC (Note1) 1.8 W Tj 150 °C Tstg −55 to 1... |
| Document |
 MT3S20P Data Sheet
PDF 215.71KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MT3S20TU |
Toshiba |
Silicon NPN Epitaxial Planar Type Transistor |
|
| 2 | MT3S03AS |
Toshiba Semiconductor |
SILICON NPN EPITAXIAL PLANAR TYPE |
|
| 3 | MT3S03AT |
Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
|
| 4 | MT3S03AU |
Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
|
| 5 | MT3S04AE |
Toshiba Semiconductor |
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
|
| 6 | MT3S04AS |
Toshiba Semiconductor |
SILICON NPN EPITAXIAL PLANAR TYPE |
|
Desde 2024. D4U Semiconductor.
|