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HM60N03 |
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| Part Number | HM60N03 |
| Manufacturer | H&M Semiconductor |
| Description | The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =60A RDS(ON)... |
| Features |
● VDS =30V,ID =60A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability HM60N03 Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin Assignment 100% UIS TESTED! TO-220-3L top view Package Marking And Ordering Information Device Marking Device Device... |
| Document |
 HM60N03 Data Sheet
PDF 677.66KB |
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